1
Transistor
2SC2405, 2SC2406
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1034 and 2SA1035
s
Features
q
Low noise voltage NV.
q
High foward current transfer ratio h
FE
.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
5
100
50
200
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SC2405
2SC2406
2SC2405
2SC2406
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 5V, I
E
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CB
= 5V, I
E
= 2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
35
55
35
55
5
180
typ
0.7
200
110
max
100
1
700
0.6
1
Unit
nA
A
V
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
2SC2405
SR
SS
ST
2SC2406
TR
TS
TT
Marking symbol :
S
(2SC2405)
T
(2SC2406)
Unit: mm
1:Base
JEDEC:TO236
2:Emitter
EIAJ:SC59
3:Collector
Mini Type Package
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
Marking
Symbol
2SC2405
2SC2406
2SC2405
2SC2406
2
Transistor
2SC2405, 2SC2406
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
NV -- V
CE
0
160
40
120
80
140
20
100
60
0
250
200
150
100
50
225
175
125
75
25
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
160
120
40
100
140
80
02
60
Ta=25C
I
B
=350
A
300
A
250
A
200
A
150
A
100
A
50
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
0.5
0.4
0.1
0.3
0.2
0
160
120
40
100
140
80
20
60
V
CE
=5V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=5V
Ta=75C
25C
25C
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
1000
800
600
400
200
900
700
500
300
100
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
500
400
300
200
100
450
350
250
150
50
V
CB
=5V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
0
10
8
6
4
2
9
7
5
3
1
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
3
10
30
100
0
160
120
40
100
140
80
20
60
I
C
=1mA
G
V
=80dB
Function=FLAT
4.7k
R
g
=100k
22k
Collector to emitter voltage V
CE
(V)
Noise voltage NV
(mV
)
3
Transistor
2SC2405, 2SC2406
NV -- V
CE
NV -- I
C
NV -- I
C
NV -- R
g
NV -- R
g
1
3
10
30
100
0
300
240
120
180
60
I
C
=1mA
G
V
=80dB
Function=RIAA
4.7k
R
g
=100k
22k
Collector to emitter voltage V
CE
(V)
Noise voltage NV
(mV
)
0.01
0.03
0.1
0.3
1
0
160
120
40
100
140
80
20
60
V
CE
=10V
G
V
=80dB
Function=FLAT
4.7k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
0.01
0.03
0.1
0.3
1
0
300
240
120
180
60
V
CE
=10V
G
V
=80dB
Function=RIAA
4.7k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
1
3
10
30
100
0
160
120
40
100
140
80
20
60
V
CE
=10V
G
V
=80dB
Function=FLAT
0.1mA
I
C
=1mA
0.5mA
Signal source resistance R
g
(k
)
Noise voltage NV
(mV
)
1
3
10
30
100
0
300
240
120
180
60
V
CE
=10V
G
V
=80dB
Function=RIAA
0.1mA
I
C
=1mA
0.5mA
Signal source resistance R
g
(k
)
Noise voltage NV
(mV
)
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